Study of Au-induced reconstruction on Si(001) surface by scanning tunneling microscopy and low energy electron diffractionKAGESHIMA, Masami; TORII, Yuji; TANO, Yutaka et al.Surface science. 2001, Vol 472, Num 1-2, pp 51-58, issn 0039-6028Article

Monolayer superlattices and heterostructures studied by surface-sensitive XAFSOYANAGI, H.Applied surface science. 1992, Vol 60-61, pp 522-528, issn 0169-4332Conference Paper

Atomic scale characterization of W surface proposed fro FEM images of a tip with and without adsorptionSATO, M.Applied surface science. 1992, Vol 60-61, pp 411-415, issn 0169-4332Conference Paper

Atomically controlled surface and interface, and semiconductor device performanceSUGANO, T.Applied surface science. 1992, Vol 60-61, pp 698-701, issn 0169-4332Conference Paper

Developments in RHEED calculationsBEEBY, J. L.Applied surface science. 1992, Vol 60-61, pp 405-410, issn 0169-4332Conference Paper

Theory of electronic excitations on semiconductor surfacesLOUIE, S. G.Applied surface science. 1992, Vol 60-61, pp 13-21, issn 0169-4332Conference Paper

AC SI-1 : International symposium on atomically controlled surfaces and interfacesTSUKADA, Masaru; KAWAZU, Akira; TSUDA, Minoru et al.Applied surface science. 1992, Vol 60-61, issn 0169-4332Conference Proceedings

A theoretical study of the growth of metals on siliconBATRA, I. P.Applied surface science. 1992, Vol 60-61, pp 136-145, issn 0169-4332Conference Paper

First-principles calculation of the migration energy of a Ga adatom on an As-stabilized GaAs(001) surfaceSHIRAISHI, K.Applied surface science. 1992, Vol 60-61, pp 210-214, issn 0169-4332Conference Paper

Determination of some physical parameters from infrared reflectance spectraKOK, W. C.Applied surface science. 1992, Vol 60-61, pp 559-564, issn 0169-4332Conference Paper

Design of atomically abrupt solid interfacesWILLIAMS, R. S.Applied surface science. 1992, Vol 60-61, pp 613-618, issn 0169-4332Conference Paper

Low-energy electron microscopy of surface processesBAUER, E.Applied surface science. 1992, Vol 60-61, pp 350-358, issn 0169-4332Conference Paper

New development in the theory of MBE growth of Si : a confrontation with experimentSTOYANOV, S.Applied surface science. 1992, Vol 60-61, pp 55-63, issn 0169-4332Conference Paper

Artificial control of dot sites for Ga droplet arrays on CaF₂ films by surface steps and electron beam modificationsUEJIMA, K; TAKESHITA, J; KAWASAKI, K et al.Japanese journal of applied physics. 1997, Vol 36, Num 6B, pp 4088-4091, issn 0021-4922, 1Conference Paper

Barrier-height imaging of oxygen-adsorbed Si(111) 7 x 7 surfacesKUROKAWA, S; YUASA, M; SAKAI, A et al.Japanese journal of applied physics. 1997, Vol 36, Num 6B, pp 3860-3863, issn 0021-4922, 1Conference Paper

Conductance oscillations in hopping conduction systems fabricated by focused ion beam implantationKONDO, H; IWANO, H; NAKATSUKA, O et al.Japanese journal of applied physics. 1997, Vol 36, Num 6B, pp 4046-4048, issn 0021-4922, 1Conference Paper

Construction of semiconductor nanoparticle layers on gold by self-assembly techniqueNAKANISHI, T; OHTANI, B; UOSAKI, K et al.Japanese journal of applied physics. 1997, Vol 36, Num 6B, pp 4053-4056, issn 0021-4922, 1Conference Paper

Dephasing processes in self-organized strained InGaAs single-dots on (311)B-GaAs substrateKAMADA, H; TEMMYO, J; NOTOMI, M et al.Japanese journal of applied physics. 1997, Vol 36, Num 6B, pp 4194-4198, issn 0021-4922, 1Conference Paper

Effect of quantum confinement and lattice relaxation on electronic states in GaAs/In_0.2Ga₈As/GaAs quantum dotsMORIYASU, K; OSAKO, S; MORI, N et al.Japanese journal of applied physics. 1997, Vol 36, Num 6B, pp 3932-3935, issn 0021-4922, 1Conference Paper

Existence of a critical size in fully symmetrical semiconductor quantum dotsSHANG YUAN REN.Japanese journal of applied physics. 1997, Vol 36, Num 6B, pp 3941-3943, issn 0021-4922, 1Conference Paper

Spectroscopy, imaging and switching behaviour of individual InP/GaInP quantum dotsCASTRILLO, P; HESSMAN, D; PISTOL, M.-E et al.Japanese journal of applied physics. 1997, Vol 36, Num 6B, pp 4188-4190, issn 0021-4922, 1Conference Paper

Structures on Si(100)2 x 1 at the initial stages of homoepitaxy by SiH₄ decompositionFEHRENBACHER, M; SPITZMÜLLER, J; PITTER, M et al.Japanese journal of applied physics. 1997, Vol 36, Num 6B, pp 3804-3809, issn 0021-4922, 1Conference Paper

Atomic force microscopy of cracks on Si(100) and GaAs(100) caused by Vickers indenterMISAWA, G; YAMADA, H; SEINO, Y et al.Japanese journal of applied physics. 1996, Vol 35, Num 6B, pp 3778-3782, issn 0021-4922, 1Conference Paper

Cross-sectional scanning tunneling microscopy on cleaved Si(111) : Observation of novel reconstruction and structural and electrical properties of MOS interfaceKOMEDA, T; GWO, S; TOKUMOTO, H et al.Japanese journal of applied physics. 1996, Vol 35, Num 6B, pp 3724-3729, issn 0021-4922, 1Conference Paper

Interpretation of frictional-force microscopy images based on the two-dimensional stick-slip motion of the tip atomSASAKI, N; KOBAYASHI, K; TSUKADA, M et al.Japanese journal of applied physics. 1996, Vol 35, Num 6B, pp 3700-3705, issn 0021-4922, 1Conference Paper